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Product Specifications
Ref No. Total Page Page No.
A 9 1
Approved
AN17821A
Silicon Monolithic Bipolar IC
Structure Appearance Application Function
SIL-12 Pin Plastic Package (Power Type with Fin) Low Frequency Amplifier BTL 5.0W x 2ch Power Amplifier with Standby Function and Volume Function
A No.
1 2 3 4 5 6 7 8
Absolute Maximum Ratings Item
Storage Temperature Operating Ambient Temperature Operating Ambient Pressure Operating Constant Acceleration Operating Shock Supply Voltage Supply Current Power Dissipation
Symbol
Tstg Topr Popr Gopr Sopr Vcc Icc PD
Ratings
-55 ~ +150 -25 ~ +70
1.013x1050.61x105 9,810 4,900
Unit
C C
Pa m/s2 m/s2
Note
1 1
14.4 2.0 1.92
V A W
2
Ta=70C
Operating Supply Voltage Range
Vcc
3.5V ~ 13.5V
Note 1) The temperature of all items shall be Ta=25C except storage temperature and operating ambient temperature. 2) At no signal input.
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
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Product Specifications
Ref No. Total Page Page No.
B-1 9 2
Approved
AN17821A
B Electrical Characteristics
No Item 1 2 Quiescent Circuit Current Standby Current
(Unless otherwise specified, the ambient temperature is 25C2C, Vcc=8.0V, frequency=1kHz and RL=8.)
Test Symbol Cir- Conditions cuit ICQ ISTB VNO GV THD PO 1 PO 2 RR Voff Att CB1 CB2 GVm CT 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Vin=0V, Vol=0V Vin=0V, Vol=0V Rg=10k, Vol=0V Po=0.5W, Vol=1.25V Po=0.5W, Vol=1.25V THD=10%, Vol=1.25V Vcc=11V THD=10%, Vol=1.25V Rg=10k, Vol=0V Vr=0.5Vrms, fr=120Hz Rg=10k, Vol=0V Po=0.5W, Vol=0V Po=0.5W, Vol=1.25V Po=0.5W, Vol=0.6V Po=0.5W, Vol=0.6V Po=0.5W, Vol=1.25V
Limits min typ max 31 2.4 4.0 30 -250 70 -1 -2 45 1 0.10 33 0.10 3.0 5.0 50 0 85 0 0 100 10 0.4 35 0.5 250 1 2
Unit mA A mVrms dB % W W dB mV dB dB dB dB dB
Note
Output Noise 3 Voltage 4 5 6 7 8 9 Voltage Gain Total Harmonic Distortion Maximum Power Output 1 Maximum Power Output 2 Ripple Rejection Ratio Output Offset Voltage
1
1
10 Volume Attenuation Ratio 11 Channel Balance 1 12 Channel Balance 2 13 Middle Voltage Gain 14 Channel Crosstalk
1
20.5 23.5 26.5 40 55 -
Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT). Eff. Date 06-MAR-2002
FMSC-PSDA-002-01 Rev.1
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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Product Specifications
(Reference Data for Design)
Ref No. Total Page Page No.
B-2 9 3
Approved
AN17821A
B Electrical Characteristics
No Item 1 2 3 Standby pin current Volume pin current Input Impedance
(Unless otherwise specified, the ambient temperature is 25C2C, Vcc=8.0V, frequency=1kHz and RL=8.)
Test Symbol Cir- Conditions cuit ISTB2 IVOL Zi 1 Vin=0V, VSTB=3V 1 Vin=0V, Vol=0V 1 Vin=0.3VDC
Limits min typ max -12 24 30 25 36
Unit A A k
Note
Note) The above characteristics are reference values determined for IC design, but not guaranteed values for shipping inspection. If problems were to occur, counter measures will be sincerely discussed.
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
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Product Specifications
Ref No. Total Page Page No.
C 9 4
Approved
AN17821A
(Description of test circuit and test method)
Test Circuit 1
AN17821A
1
+ 470 OUT1 8 Vcc 0V
2
3
4
10
+
5
270k
6
+
7
+ 1.0 10k
8
1.0 10k
9
10
11
12
68k 5V Stand-by Vin1 Vin2 0V Volume 1.25V
OUT2 8
Note) If the standby pin is open or 0V, the IC is on standby state. The IC is in the state of volume minimum if the Volume pin is ground. The IC is in the state of volume maximum if the Volume pin is open.
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
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Product Specifications
Ref No. Total Page Page No.
D 9 5
Approved
AN17821A
Circuit Function Block Diagram
+_
_+
+_
_+
1
2
3
4
5
6
7
8
9
10
11
12
Vcc
Output GND
Input GND
Output GND
Pin Descriptions
Pin No. Description 1 2 3 4 5 6 Vcc Ch.1 Output (+) GND (Ch.1 Output) Ch.1 Output (-) Standby Ch.1 Input Pin No. Description 7 8 9 10 11 12 GND (Input) Ch.2 Input Volume Ch.2 Output (-) GND (Ch.2 Output) Ch.2 Output (+)
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
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Product Specifications
Ref No. Total Page Page No.
E 9 6
Approved
AN17821A
Package Name Unit : mm
FP-12S
3.6
6.4 0.3
7.7 0.3
12
7.8 0.3
29.96 0.3
28.0 0.3
20.00.1
0.6
R1.8
1
1.2 0.1
+0.1 0.25 -0.05
2.54
0.6 0.1
3.5 0.3
29.6 0.3
Name of item Date Code Company insignia
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
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Product Specifications
Ref No. Total Page Page No.
F 9 7
Approved
AN17821A
SiN, Fe group, Ag plating, Solder plating, Ag paste, PSG, Cu group, Au plating, Solder dip,
(Structure Description)
Chip surface passivation Lead frame material Inner lead surface process Outer lead surface process Chip mounting method Wire bonding method Mold material Molding method Fin material Others ( Others ( Others ( Others ( ) ) ) ) ) ) ) ) )
1 2, 6 2 6 3 4 5 5 7
Au-Si alloy, Solder, Others ( Others ( Others ( Multiplunger mold, Others ( Others (
Thermalsonic bonding, Epoxy, Transfer mold, Cu Group
Package FP-12S
1 4 3
5
6
2
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
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Product Specifications
(Technical Data)
Ref No. Total Page Page No.
G 9 8
Approved
AN17821A
(
13 12
5C/W heat sink
Rth(j-c) = 2C/W Rth(j-a) = 41.7C/W
)
FP-12S Package Power Dissipation PD - Ta
11 10 9
Power Dissipation, PD (W)
8 7 6 5 4 3 2 1 0
Single Package Without heat sink Rthj-a=41.7C/W 20C/W heat sink
10C/W heat sink
0
25
50
70 75
100
125
150
Ambient Temperature, Ta (C)
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1
www..com
Prepared Checked
Product Specifications
(Technical Data)
Ref No. Total Page Page No.
G 9 9
Approved
AN17821A
(Precautions for use)
1) Make sure that the IC is free of any pin short-circuiting, ground short-circuiting, pin shift and reverse insertion. 2) Ground the radiation fin so that there will be no difference in electric potential between the radiation fin and ground. 3) The thermal protection circuit operates at a Tj of approximately 150C. The thermal protection circuit is reset automatically when the temperature drops. 4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high or the IC operates high output power. 5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the previous stage.
Eff. Date 06-MAR-2002
Eff. Date
Eff. Date
Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
FMSC-PSDA-002-01 Rev.1


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